NCE4015S mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =40V,ID =15A RDS(ON) <10mΩ @ VGS=10V (Typ. 6.1 mΩ) RDS(ON) <15mΩ @ VGS=4.5V (Typ. 11.4 mΩ)
* High density cell design for ultra low Rdson
* Fully charac.
General Features
* VDS =40V,ID =15A RDS(ON) <10mΩ @ VGS=10V (Typ. 6.1 mΩ) RDS(ON) <15mΩ @ VGS=4.5V (Typ. 11.4 mΩ)
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The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =40V,ID =15A RDS(ON) <10mΩ @ VGS=10V (Typ. 6.1 mΩ) RDS(ON) <15mΩ .
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