NCE4403 mosfet equivalent, nce p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON) <117mΩ @ VGS=-2.5V
Schematic diagram
* High density cell design for ultra low.
General Features
* VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON) <117mΩ @ VGS=-.
The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4..
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