NCE3134 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =0.75A RDS(ON) <380mΩ @ VGS=4.5V RDS(ON) < 450mΩ @ VGS=2.5V RDS(ON) < 800mΩ @ VGS=1.8V
* High power and current handing capability
* Lead free .
The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.
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