NCE3010S mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage.
GENERAL FEATURES
* VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V
* High density cell d.
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V.
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