NCE3012S mosfet equivalent, nce p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V
Schematic diagram
* High Power and current handing capability
* Lead free produc.
GENERAL FEATURES
* VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V
Schematic diagram
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The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID.
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