NCE3011E mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product i.
It is ESD protested.
General Features
* VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rat.
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