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NCE3011E Datasheet, NCE Power Semiconductor

NCE3011E mosfet equivalent, n-channel enhancement mode power mosfet.

NCE3011E Avg. rating / M : 1.0 rating-11

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NCE3011E Datasheet

Features and benefits


* VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product i.

Application

It is ESD protested. General Features
* VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rat.

Description

The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features .

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TAGS

NCE3011E
N-Channel
Enhancement
Mode
Power
MOSFET
NCE3010S
NCE3012S
NCE3018AS
NCE Power Semiconductor

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