NCE30D0808J mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surfa.
Genera Features
* VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V
* High Power and current.
The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.
Genera Features
* VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ .
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