NCE3090K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized.
General Features
* VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V
* H.
The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (t.
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