NCE3060G mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.
General Features
* VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
* High density cell de.
The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
.
Image gallery
TAGS
Download (Size : 342.99KB)