NCE3030K mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =30V,ID =30A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabi.
GENERAL FEATURES
* VDS =30V,ID =30A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson
The NCE3030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =30V,ID =30A RDS(ON) <20mΩ @ VGS=10V
* High density cell desi.
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