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BSX20 - NPN SILICON TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tq = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCER Value 15 20 Unit Vdc Vdc VCBO VEBO ic PD pd Tj. T s tg 40 4.5 360 2.06 1.2 6.85 -65 to +200 Vdc Vdc mAmp mWatt mW/°C Watt mW/°C °C Symbol RfcUC Max 146 Unit °C/W ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted.
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