BSX20 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Datasheet Summary

Description

Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Peak Current (t=10us) Power Dissipation@ Ta=25 degC @Tc=25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient SYMBOL VCBO VCES VC

CDIL

📥 Download Datasheet

Datasheet Details

Part number	BSX20
Manufacturer	CDIL
File Size	88.77 KB
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BSX20 Datasheet
Additional preview pages of the BSX20 datasheet.

📁 Similar Datasheet

BSX20 - NPN transistor (NXP)
BSX20 - NPN Transistor (STMicroelectronics)
BSX20 - NPN TRANSISTORS (Micro Electronics)
BSX20 - Low Power Bipolar Transistors (Multicomp)
BSX20 - NPN SILICON TRANSISTOR (Motorola)
BSX21 - Bipolar NPN Device (Seme LAB)
BSX21 - Silicon NPN Transistor (Valvo)
BSX26 - NPN Transistor (SGS-ATES)
BSX26 - HIGH-SPEED SATURATED SWITCH (STMicroelectronics)
BSX27 - NPN Transistor (SGS-ATES)

Other Datasheets by CDIL

BSX45 - NPN SILICON PLANAR TRANSISTORS
BSX46 - NPN SILICON PLANAR TRANSISTORS
BSX47 - NPN SILICON PLANAR TRANSISTORS

Full PDF Text Transcription

Click to expand full text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20 TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Peak Current (t=10us) Power Dissipation@ Ta=25 degC @Tc=25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient SYMBOL VCBO VCES VCEO VEBO ICM Ptot Tj, Tstg Rth(j-c) Rth(j-a) VALUE 40 40 15 4.5 0.5 0.36 1.

Published: Jun 17, 2017 |