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BSX20 - Low Power Bipolar Transistors

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Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Peak Current (t = 10µs) Power Dissipation at Ta = 25°C at TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Symbol VCBO VCES VCE

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Datasheet Details

Part number BSX20
Manufacturer Multicomp
File Size 139.02 KB
Description Low Power Bipolar Transistors
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BSX20 Low Power Bipolar Transistors Feature: • NPN Silicon Planar Switching Transistors. Applications: • High speed saturated switching applications. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 07/04/06 V1.
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