BSX26 - HIGH-SPEED SATURATED SWITCH

Datasheet Summary

Description

The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case.

It is designed for switching applications up to 500 mA.

STMicroelectronics

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Datasheet Details

Part number	BSX26
Manufacturer	STMicroelectronics
File Size	92.64 KB
Description	HIGH-SPEED SATURATED SWITCH
Datasheet	BSX26 Datasheet
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BSX26 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for switching applications up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4 500 0.36 1.2 0.68 – 65 to 200 Unit V V V V mA W W W °C 1/6 T s t g, T j November 1988 Free Datasheet http://www.datasheet.

Published: Feb 1, 2014 |