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BSX32
CASE 79, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR
NPN SILICON
Refer to 2N3725 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @T/ = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25 aC Operating and Storage Junction
Temperature Range
Symbol VCEO VCBO VEBO
ic
PD
pd
JJ- T stg
Value 40 65 6
1
0.8 4.6
3.5 2.0
-65 to +200
Unit
Vdc Vdc Vdc Adc Watt
mW/°C
Watt
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
c Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mA, Bl = 0)(1)
Collector-Base Breakdown Voltage dC = 100 nA, l£ = 0)
Emitter-Base Breakdown Voltage (IE = 100 uA.
BSX32 Datasheet
