RD07MVS1B mosfet equivalent, silicon rf power mosfet.
Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
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0.2+/-0.05
0.9+/-0.1
High power gain:
Termi.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
1 2
3.5+/-0.05
Datasheet pdf - http://w.
RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power
4.9+/-0.15 1.0+/-0.05
6.0+/-0.15
0.2+/-0.05
amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
1 2
3.5+/-0.05
D.
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