RD02LUS2 fet equivalent, silicon rf power mos fet.
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protection diode
APPLICATION
Fo.
RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device.
OUTLINE DRAWING
FEATURES
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protecti.
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