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Mitsubishi

RD02LUS2 Datasheet Preview

RD02LUS2 Datasheet

Silicon RF Power MOS FET

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< Silicon RF Power MOS FET (Discrete) >
RD02LUS2
RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V
DESCRIPTION
RD02LUS2 is a MOS FET type transistor designed
for VHF/UHF RF driver device.
OUTLINE DRAWING
FEATURES
1.High Power Gain and High Efficiency
Pout>2.0W, Gp=10dB, Drain Effi. =60%typ
@ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protection diode
APPLICATION
For driver stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RoHS COMPLIANT
RD02LUS2-501, T513 is EU RoHS compliant.
This product includes the lead in high melting
temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER
VDSS Drain to source voltage
VGSS Gate to source voltage
Pch* Channel dissipation
Pin Input Power
ID Drain Current
Tch Channel Temperature
Tstg Storage temperature
CONDITIONS
VGS=0V
VDS=0V
Tc=25°C
Zg=Zl=50
-
-
-
RATINGS
25
-5/+10
15.6
400
2.2
150
-40 to +125
UNIT
V
V
W
mW
A
°C
°C
Note: Above parameters are guaranteed independently.
* Theoretical value in case of mounted on infinite heat sink.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
D
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=3.6V, IDS=1mA
Output power
VDD=3.6V, Pin=0.2W
Drain efficiency
f=470MHz,Idq=140mA
LIMITS
MIN TYP MAX
- - 50
- -1
0.5 1.0 1.5
- 2.3 -
- 70 -
UNIT
uA
uA
V
W
%
Note: Above parameters, ratings, limits and conditions are subject to change.
TEMPERATURE CHARACTERISTICS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
Rth(j-c) Thermal Resistance
CONDITIONS
Junction to Case
LIMITS
MIN TYP MAX
- 2.4 8.0
UNIT
°C /W
Publication Date : Mar.2017
1




Mitsubishi

RD02LUS2 Datasheet Preview

RD02LUS2 Datasheet

Silicon RF Power MOS FET

No Preview Available !

< Silicon RF Power MOS FET (Discrete) >
RD02LUS2
RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Publication Date : Mar.2017
2


Part Number RD02LUS2
Description Silicon RF Power MOS FET
Maker Mitsubishi
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