RD02MUS1B transistor equivalent, silicon mosfet power transistor.
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Dr.
RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
0.2+/-0.05
1
4.9+/-0.15 1..
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source vol.
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