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RD02MUS1B Datasheet Mitsubishi Electric Semiconductor

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Mitsubishi Electric Semiconductor · RD02MUS1B File Size : 492.75KB · star-17

Features and Benefits

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3..

RD02MUS1B RD02MUS1B RD02MUS1B
TAGS
Silicon
MOSFET
Power
Transistor
RD02MUS1
RD02MUS1B
RD02MUS2

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