Datasheet Summary
< Silicon RF Power MOS FET (Discrete) >
RoHS pliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
0.2+/-0.05
4.9+/-0.15 1.0+/-0.05
3 INDEX MARK (Gate)
(0.22)
(0.25)
(0.25)
Features
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value...
