ME95N10T-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦8.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
PIN CONFIGUR.
The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
FEATURES
* RDS(ON)≦8.5mΩ@VGS=.
Image gallery
TAGS
Download (Size : 901.02KB)