* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦9mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON.

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