* RDS(ON)≦4.3mΩ@VGS=10V
* RDS(ON)≦5.7mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Power Management in Note book
* NB/MB Vcore Low side switching
* Portable Equipment
* Battery Powered .

The ME95N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

ME95N03

ME95N03-G

ME95N03T

ME95N03T-G

ME95N04-G

ME95N10F

ME95N10F-G

ME95N10T

ME95N10T-G

ME95P03

ME95P03-G

ME90N03

ME90N03-G

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