ME95N10F-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦8.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
PIN CONFIGUR.
The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
FEATURES
* RDS(ON)≦8.5mΩ@VGS=.
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