* RDS(ON) ≦18mΩ@VGS=-10V
* RDS(ON) ≦36mΩ@VGS=-4.5V APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Lo.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC P.

The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly .

ME7835-G

ME7835S-G

ME7837S-G

ME7839S-G

ME7802-G

ME7802S-G

ME7804-G

ME7804AS-G

ME7804S-G

ME7806S-G

ME7809

ME7809-G

ME7812S-G

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