* RDS(ON)≦22mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS <.

* Power Management
* DC/DC Converter
* Load Switch PIN CONFIGURATION (TO-220) Top View e Ordering Informat.

The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON.

ME50N06A

ME50N06A-G

ME50N06T-G

ME50N02

ME50N02-G

ME50N08

ME50N08-G

ME50N10

ME50N10-G

ME50N10AT

ME50N10AT-G

ME50N10F

ME50N10F-G

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