ME50N02-G datasheet, mosfet equivalent, Matsuki

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 0.96MB)

Features and benefits

* RDS(ON)≦8mΩ@VGS=10V
* RDS(ON)≦9mΩ@VGS=4.5V
* RDS(ON)≦12mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resis.

Application

* Power Management
* DC/DC Converter Ordering Information: ME50N02 (Pb-free) ME50N02-G (Green product-Halogen f.

Description

The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

Image gallery