* RDS(ON)≦8mΩ@VGS=10V
* RDS(ON)≦9mΩ@VGS=4.5V
* RDS(ON)≦12mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resis.

* Power Management
* DC/DC Converter Ordering Information: ME50N02 (Pb-free) ME50N02-G (Green product-Halogen f.

The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME50N02-G

ME50N06A

ME50N06A-G

ME50N06T

ME50N06T-G

ME50N08

ME50N08-G

ME50N10

ME50N10-G

ME50N10AT

ME50N10AT-G

ME50N10F

ME50N10F-G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts