ME50N06T-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦22mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
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* Power Management
* DC/DC Converter
* Load Switch
PIN CONFIGURATION
(TO-220) Top View
e Ordering Informat.
The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
* RDS(ON.
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