* RDS(ON)≦166mΩ@VGS=10V
* RDS(ON)≦213mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* DC/DC Converter
* Load Switch PIN CONFIGURATION (SOT-89) Top View * The Ordering Information: ME2514 (Pb-fre.

The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.

ME2514-G

ME2508

ME2508-G

ME25N06

ME25N06-G

ME25N10F

ME25N10F-G

ME25N10T

ME25N10T-G

ME25N15

ME25N15-G

ME25N15AL

ME25N15AL-G

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