* RDS(ON)≦85mΩ@VGS=10V
* RDS(ON)≦105mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curren.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-220F) Top Vi.

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEA.

ME25N10F

ME25N10T

ME25N10T-G

ME25N15

ME25N15-G

ME25N15AL

ME25N15AL-G

ME25N15F

ME25N15F-G

ME25N06

ME25N06-G

ME2508

ME2508-G

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