* RDS(ON) ( typ) 60mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICA.

* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View * The .

The ME25N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME25N10F

ME25N10F-G

ME25N10T

ME25N10T-G

ME25N15-G

ME25N15AL

ME25N15AL-G

ME25N15F

ME25N15F-G

ME25N06

ME25N06-G

ME2508

ME2508-G

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