* RDS(ON)≦62mΩ@VGS=10V
* RDS(ON)≦86mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME25N06-G

ME25N10F

ME25N10F-G

ME25N10T

ME25N10T-G

ME25N15

ME25N15-G

ME25N15AL

ME25N15AL-G

ME25N15F

ME25N15F-G

ME2508

ME2508-G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts