CMPA2560025F Datasheet | MACOM Technology Solutions

25 W, 2500 - 6000 MHz, Ga N MMIC Power Amplifier Description The CMPA2560025F is a gallium nitride (Ga N) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si and Ga As transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper Tungsten heatsink. Features - 24 d B small signal gain - 25 W typical PSAT - Operation up to 28 V - High breakdown voltage - High temperature operation Applications - Ultra broadband amplifiers - Fiber drivers - Test instrumentation - EMC amplifier drivers Package Types: 780019 PN’s: CMPA2560025F Typical Performance Over 2.5 - 6.0 GHz (TC = 25 °C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Gain Saturated Output Power, P1 SAT Power Gain @ POUT 43 d Bm PAE @ POUT 43 d Bm Note: 1 PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 m...