* 24 dB small signal gain
* 25 W typical PSAT
* Operation up to 28 V
* High breakdown voltage
* High temperature operation Applications
* Ultra b.

* Ultra broadband amplifiers
* Fiber drivers
* Test instrumentation
* EMC amplifier drivers Package Typ.

The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher.

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