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CMPA2060035F - GaN MMIC Power Amplifier

General Description

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 28 dB Small Signal Gain.
  • 35 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA2060035F 35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier Description The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink. PN : CMPA2060035F Package Type : 440219 Typical Performance Over 2.0-6.0 GHz, 28 V (TC = 25ºC) Parameter 2.0 GHz 4.