CMPA2060035F1 Datasheet | MACOM Technology Solutions

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Description The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors. This MMIC contains a two-stage 50-ohm matched amplifier, enabling very wide bandwidths to be achieved, in a small 0.5” square, screw-down package. Package Types: 440219 PN’s: CMPA2060035F1 Features Applic...