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CMPA2060035F1 - Power Amplifier

Description

The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

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CMPA2060035F1 35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Description The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage 50-ohm matched amplifier, enabling very wide bandwidths to be achieved, in a small 0.5” square, screw-down package.
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