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CMPA2735015D - Power Amplifier

Description

The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Features

  • 35 dB small signal gain.
  • 20 W typical PSAT.
  • Operation up to 50 V.
  • High breakdown voltage.
  • High temperature operation.
  • Size 0.118 x 0.071 x 0.004 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA2735015D 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Features • 35 dB small signal gain • 20 W typical PSAT • Operation up to 50 V • High breakdown voltage • High temperature operation • Size 0.118 x 0.071 x 0.
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