Datasheet4U Logo Datasheet4U.com

CGHV1F025S - GaN HEMT

Description

The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.

The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications.

Features

  • Up to 15 GHz Operation.
  • 25 W Typical Output Power.
  • 11 dB Gain at 9.4 GHz.

📥 Download Datasheet

Datasheet preview – CGHV1F025S

Datasheet Details

Part number CGHV1F025S
Manufacturer MACOM
File Size 1.29 MB
Description GaN HEMT
Datasheet download datasheet CGHV1F025S Datasheet
Additional preview pages of the CGHV1F025S datasheet.

📁 Similar Datasheet

Other Datasheets by MACOM

Full PDF Text Transcription

Click to expand full text
CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F025S Typical Performance 8.9 - 9.
Published: |