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CGHV1F025S Datasheet, MACOM

CGHV1F025S hemt equivalent, gan hemt.

CGHV1F025S Avg. rating / M : 1.0 rating-11

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CGHV1F025S Datasheet

Features and benefits


* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz
* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for AD.

Application

The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail c.

Description

The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier a.

Image gallery

CGHV1F025S Page 1 CGHV1F025S Page 2 CGHV1F025S Page 3

TAGS

CGHV1F025S
GaN
HEMT
MACOM

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