NPT1015B transistor equivalent, gan wideband transistor.
* GaN on Si HEMT D-Mode Transistor
* Suitable for linear and saturated applications
* Tunable from DC - 3.5 GHz
* 28 V Operation
* 12 dB Gain @ 2.5 GH.
* Tunable from DC - 3.5 GHz
* 28 V Operation
* 12 dB Gain @ 2.5 GHz
* 54 % Drain Efficiency @ 2.5 GHz
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange..
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