NPT1015B, NPT1015B-MA Datasheet - MA-COM

NPT1015B GaN Wideband Transistor

The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communi.

NPT1015B Features

* GaN on Si HEMT D-Mode Transistor

* Suitable for linear and saturated applications

* Tunable from DC - 3.5 GHz

* 28 V Operation

* 12 dB Gain @ 2.5 GHz

* 54 % Drain Efficiency @ 2.5 GHz

* 100 % RF Tested

* Standard metal ceramic package with bolt down flange

* RoH

NPT1015B, NPT1015B-MA Datasheet

NPT1015B Datasheet Preview — This datasheet PDF includes multiple part numbers: NPT1015B, NPT1015B-MA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

NPT1015B, NPT1015B-MA

Manufacturer:

MA-COM

File Size:

1.46 MB

Description:

Gan wideband transistor.

This datasheet PDF includes multiple part numbers: NPT1015B, NPT1015B-MA.
Please refer to the document for exact specifications by model.

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NPT1015B NPT1015B-MA GaN Wideband Transistor MA-COM

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