NPT2010 hemt equivalent, gan hemt.
* Suitable for linear and saturated applications
* Tunable from DC-2.2 GHz
* 48V Operation
* Industry Standard Package
* High Drain Efficiency (>60%)
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* Tunable from DC-2.2 GHz
* 48V Operation
* Industry Standard Package
* High Drain Efficiency (>60%)
Ap.
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt d.
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