NPT2020 Datasheet | MACOM Technology Solutions

NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features - GaN on Si HEMT Depletion Mode Transistor - Suitable for Linear and Saturated Applications - Tunable from DC - 3.5 GHz - 48 V Operation - 13.5 dB Gain at 3.5 GHz - 55 % Drain Efficiency at 3.5 GHz - 100 % RF Tested - Standard package with bolt down flange - RoHS- pliant and 260°C reflow patible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. The NPT2020 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Rev. V1 Functional Schematic RFIN / VG 1 2 RFOUT / VD 3 Flange Ordering Information Part Number Package NPT2020...