NPT2020
Description
The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.
Key Features
- GaN on Si HEMT Depletion Mode Transistor
- Suitable for Linear and Saturated Applications
- Tunable from DC - 3.5 GHz
- 48 V Operation
- 13.5 dB Gain at 3.5 GHz
- 55 % Drain Efficiency at 3.5 GHz
- 100 % RF Tested
- Standard package with bolt down flange
- RoHS* Compliant and 260°C reflow compatible
