NPT2020
Features
- Ga N on Si HEMT Depletion Mode Transistor
- Suitable for Linear and Saturated Applications
- Tunable from DC
- 3.5 GHz
- 48 V Operation
- 13.5 d B Gain at 3.5 GHz
- 55 % Drain Efficiency at 3.5 GHz
- 100 % RF Tested
- Standard package with bolt down flange
- Ro HS- pliant and 260°C reflow patible
Description
The NPT2020 Ga N HEMT is a wideband transistor optimized for DC
- 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 d Bm) in an industry standard surface mount package.
The NPT2020 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process
- a proprietary Ga N-on-Silicon technology.
Rev. V1
Functional Schematic
RFIN / VG 1
2 RFOUT / VD
Flange
Ordering Information
Part Number
Package
Bulk Quantity
NPT2020-SMBPPR
Custom Sample Board1
NPT2020-SMB2
1250-1850 MHz Sample Board
1....
