NPT2021
Features
- Ga N on Si HEMT D-Mode Transistor
- Suitable for linear and saturated applications
- Tunable from DC
- 2.5 GHz
- 48 V Operation
- 16.5 d B Gain at 2.5 GHz
- 55 % Drain Efficiency at 2.5 GHz
- 100 % RF Tested
- TO-272 Package
- Ro HS- pliant and 260°C reflow patible
Description
The NPT2021 Ga N HEMT is a wideband transistor optimized for DC
- 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.
The NPT2021 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process
- a proprietary Ga N-on-Silicon technology.
Functional Schematic
2 1
Rev. V1
Ordering Information
Part Number NPT2021
NPT2021-SMBPPR
Package Bulk Quantity Sample Board
Pin Configuration
Pin No.
Pin Name
1 RFIN / VG 2 RFOUT / VD 3 Pad1
Function RF Input / Gate RF Output / Drain...
