* RDS(on)=0.17Ω @ VGS=10V
* Low gate charge ( typical 102nC)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability 3. .

28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

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