KIA16N50H
Description
This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
2. Features n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45n C) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
1 of 6
Function Gate Drain Source
Rev 1.3 SEP 2014
SEMICONDUCTORS
16A，500V N-CHANNEL MOSFET
4. Absolute maximum ratings
16N50H
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current continuous
TC=25ºC TC=100ºC
Drain current pulsed (note1)
IDm
Avalanche...
