* RDS(ON)=4.1Ω@VGS=10V.
* Low gate charge (typical 9nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved dv/d.

such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features
* RDS(ON)=4.

The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features
* RDS.

2N60

2N60-C

2N60-CBS

2N60-E

2N60-F

2N60-TC

2N6008

2N6009

2N6027

2N6028

2N6029

2N6030

2N6031

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