2N60 Datasheet (PDF) Download
Unisonic Technologies
2N60

Overview

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.

  • RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Power MOSFET
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