2N60
Description
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
