2N60 mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
Power MOSFET
* SYMBOL
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in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at h.
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