2N60 Datasheet | yecheng technology

Shenzhen yecheng technology industry co.,ltd N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-220 PIN1 G ! PIN2 D ! " !" " " Features z Robust High Voltage Termination ! PIN3 S z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode z Diode is...