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R SEMICONDUCTOR
2N60 600V N-Channel Power MOSFET
FEATURES
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high ruggedness
MECHANICAL DATA
PRODUCT SUMMARY
V DS (V)
RDS(on) (Ω)
600 4.4 @ VGS =10V
TO-220AB
2N60
ITO-220AB
2N60F
ID (A)
2
TO-263
2N60D
● Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package
23 1
Ordering Information
Part No.
Package
Packing
1 23
TO-262
2N60E
1 23
TO-251
2N60N
TO-252
2N60M
2N60-TU
TO-220
50pcs / Tube
2N60F-TU
ITO-220
50pcs / Tube
2N60E-TU
TO-262
50pcs / Tube
2N60D-TU 2N60D-TR 2N60N-TU 2N60M-TU 2N60M-TR
TO-263 TO-263 TO-251 TO-252
TO-252
50pcs / Tube 800pcs / 13"Reel 75pcs / Tube 75pcs / Tube
2.5Kpcs / 13"Reel
Pin Definition:
1. Gate 2.