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KU086N10F KEC N-Channel MOSFET

Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERIST...
Features VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note...

Datasheet PDF File KU086N10F Datasheet - 1.24MB

KU086N10F  






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