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KU086N10F Datasheet, KEC

KU086N10F mosfet equivalent, n-channel mosfet.

KU086N10F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.24MB)

KU086N10F Datasheet

Features and benefits

VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain.

Application

FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHAR.

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery.

Image gallery

KU086N10F Page 1 KU086N10F Page 2 KU086N10F Page 3

TAGS

KU086N10F
N-Channel
MOSFET
KU086N10P
KU024N06P
KU034N08P
KEC

Manufacturer


KEC

Related datasheet

KU086N10F

KU086N10P

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