KU086N10F mosfet equivalent, n-channel mosfet.
VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain.
FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHAR.
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery.
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