VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Volt.

FEATURES VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V KU045N10P N-ch Trench MOS FET.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery .

KU047N08P

KU048N03D

KU024N06P

KU034N08P

KU035N06P

KU054N03D

KU056N03Q

KU063N03Q

KU068N03D

KU086N10F

KU086N10P

KU1011S28

KU1011S64

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