KU024N06P datasheet, fet equivalent, KEC

Features and benefits

VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Volta.

Application

FEATURES VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET .

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery .

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