KU056N03Q - N-Ch Trench MOSFET

KEC semiconductor

KU056N03Q Datasheet Preview — Preview of KU056N03Q PDF

Datasheet Details

Part number	KU056N03Q
Manufacturer	KEC ↗ semiconductor
File Size	90.54 KB
Description	N-Ch Trench MOSFET
Datasheet	KU056N03Q_KECsemiconductor.pdf

KU056N03Q Product details

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

Features

VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max. ) @ VGS=10V RDS(ON)=9.7m (Max. ) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25.

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Published: Jul 12, 2010 |