KU056N03Q Datasheet | KEC

DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack. .. N-Ch Trench MOSFET FEATURES VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise noted) SYMBOL RATING VDSS VGSS (Note 1) ID IDP (Note 1) PD Tj Tstg (Note 1) Rth JA 30 20 17 68 2.5 150 -55~150 50 /W UNIT V V A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. KU056N 03Q PIN CONNECTION (TOP VIEW) 1 2 3 8 7 6 5 2010. 6. 17 Revision No : 0 1/4 ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note2) Pulse Test : Pulse Width 300 VSD trr Qrr VGS=0V, IS=17A IS=17A, d I/dt=100A/ s IS=17A, d I/dt=100A/ s (Note2) VGS=10V VGS=4.5V Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDS=15V, VGS=10V ID=17A, RG=1.6 (Note2) VDS=15V, VGS=10V, ID=17A...